Data Sheet
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? 2011 ROHM Co., Ltd. All rights reserved.
Schottky barrier diode
RB215T-90
?Applications ?Dimensions (Unit : mm)
?Structure
General rectification
(Common cathode dual chip)
?Features
1) Small power mold type.(PMDU)
2) Low IR
3) High reliability
?Construction
Silicon epitaxial planar
?Absolute maximum ratings
(Ta=25
?C)
Parameter LimitsSymbol Unit
Reverse voltage (repetitive) 90VRM
V
Reverse voltage (DC) 90VR
V
Average rectified forward current(*1) 20Io A
IFSM
A
Junction temperature 150Tj
?C
Tstg
?C
?Electrical characteristic
(Ta=25
?C)
Symbol Min. Typ. Max. Unit
Forward voltage
VF
- - 0.75 V
IF=10A
IR
- - 400
μA
VR=90V
Thermal impedance
?jc
- - 1.75
?C/W
junction to case
Conditions
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=110?C
Parameter
100
Storage temperature
?40 to ?150
Reverse current
Forward current surge peak (60Hz/1cyc) (*1)
(1) (2) (3)
1.2
1.3
0.8
(1) (2) (3)
10.0±0.3
    0.1
5.0±0.2
8.0±0.2
12.0±0.2
2.8±0.2
    0.1
4.5±0.3
    0.1
0.7±0.1
0.05
2.6±0.5
13.5MIN
8.0
15.0±0.4
  0.2
ROHM : TO220FN
Manufacture Date
1/3
2011.04 - Rev.D
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